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savantic semiconductor product specification silicon pnp power transistors 2SA1220 2SA1220a d escription with to-126 package complement to type 2sc2690/2690a applications audio frequency power amplifier high frequency power amplifier pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2SA1220 -120 v cbo collector-base voltage 2SA1220a open emitter -160 v 2SA1220 -120 v ceo collector-emitter voltage 2SA1220a open base -160 v v ebo emitter-base voltage open collector -5 v i c collector current -1.2 a i cm collector current-peak -2.5 a i b base current -0.3 a t a =25 1.2 p d total power dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -55+150
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1220 2SA1220a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =-1a; i b =-0.2a -0.7 v v besat base-emitter saturation voltage i c =-1a ;i b =-0.2a -1.3 v i cbo collector cut-off current v cb =-120v; i e =0 -1 a i ebo emitter cut-off current v eb =-3v; i c =0 -1 a h fe-1 dc current gain i c =-5ma ; v ce =-5v 35 h fe-2 dc current gain i c =-0.3a ; v ce =-5v 60 320 c ob output capacitance i e =0 ; v cb =-10v f=1mhz 26 pf f t transition frequency i c =-0.2a ; v ce =5v 175 mhz h fe-2 classifications r q p 60-120 100-200 160-320
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1220 2SA1220a package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon pnp power transistors 2SA1220 2SA1220a

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